Samsung
Samsung could apply MUF material in its next-gen semiconductor
Last month at CES 2024, the South Korean tech giant officially introduced a large lineup of cutting-edge semiconductors Therefore, a new report suggests that Samsung is considering applying new Molded Underfill (MUF)’ material in its next-gen semiconductor packaging.
According to the information, Samsung Electronics is planning to introduce MUF material through the silicon electrode (TSV) process. However, the involvement of new materials can be interpreted as an attempt to improve processes and increase productivity.
So far, the firm has only used its non-conductive adhesive film (NCF) when vertically connecting semiconductors. SK Hynix also used NCF until the 2nd generation HBM but switched to MUF from the 3rd generation (HBM2E) and stood out in the HBM market.
However, currently, it’s unclear whether Samsung Electronics will apply MUF material to its next-generation semiconductor or not. But if it turns out to be true, then it is expected to have a large impact on the semiconductor materials, components, and equipment industry.
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Furthermore, MUF is a material that is injected between semiconductors after the TSV process, which drills thousands of microscopic holes in the semiconductor and connects the top and bottom. It plays the role of solidifying and joining several vertically stacked semiconductors.
