Samsung introduced industry’s first 512GB HKMG-based DDR5 memory

Alongside the top position in smartphone sales, Samsung is also known as a leader in advanced memory technology, which has recently unveiled the industry’s first 512GB DDR5 module based on High-K Metal Gate (HKMG) process technology.

Compared to DDR4, the DDR5 delivers more than 2x performance that makes it capable of orchestrating the most extreme compute-hungry, high-bandwidth workloads in supercomputing, artificial intelligence (AI), and machine learning (ML), as well as data analytics applications.

According to Samsung, the DDR5 will utilize highly advanced HKMG technology that has been traditionally used in logic semiconductors. After continuous scaling down of DRAM structures, the company has finally thinned the insulation layer, which leads to a higher leakage current.

By replacing insulators with HKMG materials, Samsung’s DDR5 will be able to reduce leakage and reach a new level of performance. This new memory will also reduce power consumption by approximately 13%, making it particularly suitable for data centers where energy efficiency is increasingly important.

The HKMG process was first adopted in Samsung’s GDDR6 memory in 2018. By expanding the use of DDR5, Samsung has further consolidated its leading position in next-generation DRAM technology.

Samsung DDR5 uses TSV technology to stack eight layers of 16Gb DRAM chips to provide a maximum capacity of 512GB. TSV was first used in DRAM in 2014 when the company introduced a server module with a capacity of up to 256GB.

The Korean tech giant is currently providing customers with different variants of its DDR5 memory product line for verification and finally certification through its leading products to accelerate AI/ML, exascale calculations, analysis, network, and another data-intensive Workload.

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